单电子晶体管由于其纳米级的器件尺寸和超低功耗等优点被广泛认为是当前最有应用前景的纳米电子器件之一，实现室温下的正常工作和器件结构的精确控制是其实用化的关键。室温单电子晶体管的主流制备方法为自顶向下工艺和自底向上工艺。自顶向下工艺便于器件集成，但纳米尺度下的制备工艺误差较大，室温单电子晶体管的性质难以稳定；自底向上工艺能够比较容易地制备出室温单电子晶体管，但同样有耦合结构误差较大的问题。在结合自顶向下工艺和自底向上工艺的基础上，引进纳米结构制备的新技术来提高工艺过程的可控性，是下一步室温单电子晶体管制备的研究重点。

Single electron transistor (SET) is considered as one of the most promising nanoelectronic devices for its nanoscale dimension and ultralow power consumption. Roomtemperature operation and the precise controllability of the device structure are the key issues for the widespread use of SET. The dominant fabrication techniques of the roomtemperature single electron transistor (RTSET) are the topdown process and the bottomup process. The topdown process is convenient for the integration of SETs,but difficult to control the error of the nanostructures and the characteristics of  SETs; the bottomup process is easy to make SET operate at room temperature,but also hard to reduce the error of the coupling structures in SETs. The next key to study is bring new nanostructure fabrication methods to improve the precision of the SET process based on both the topdown and bottomup processes.