基于 28 nm CMOS工艺采用亚阈值区MOSFET的低温漂系数高电源抑制电流模带隙基准
赵成卓, 吕方旭, 徐炜遐, 黄恒, 罗章, 辛可为, 王文晨, 李萌, 赖明澈, 庞征斌
A current-mode bandgap voltage reference with low temperature coefficient and high PSRR using subthreshold MOSFET in 28 nm CMOS
ZHAO Chengzhuo, Lv Fangxu, XU Weixia, HUANG Heng, LUO Zhang, XIN Kewei, WANG Wenchen, LI Meng, LAI Mingche, PANG Zhengbin
计算机工程与科学
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2026, (5): 770
-778
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DOI: 10.3969/j.issn.1007-130X.2026.05.002
