关键词: 单粒子效应；软错误；简化电阻电容电路模型；临位翻转预测

Abstract:

As technology scales down to nanometer, the effect of microscopic particles on semiconductor devices becomes more and more influential. In recent years, studies of device reliability gradually attract the attention of people and a lot of researches are carried out. The paper pays attention to the effect of Single Event Upset and uses the simplified RC circuit model to study the application of simplified circuit on the basis of traditional simulation. It also summarizes the law of resistance and capacitance values that changes the electrical properties at the sensitive node electrical properties of the equivalent circuit and explores the accuracy of SEU estimation using curve IdVd. A method of predicting the adjacent position upset in single test is proposed. According to the characteristics of experiments’ IdVd curve, a prediction can be made by classifying them. Simulation results are compared with the prediction results, proving that they are the same and the prediction is accurate and valid.

Key words: SEU；soft error；simplified RC circuit；prediction of adjacent position upset