[1]Ning T H. 1 μm MOSFET VLSI technology:Part IVhot electron design constraints[J]. IEEE Transactions on Electron Devices, 1979, 26(4):346353.
[2]Chung J E, Jeng M, Moon J E, et al. Lowvoltage hotelectron currents and degradation in deepsubmicrometer MOSFET’s[J]. IEEE Transactions on Electron Devices, 1990, 37(7):16511657.
[3]Zhao S P, Taylor S, Eccleston W, et al. Oxide degradation study during substrate hot electron injection[J]. Microelectronic Engineering, 1993, 22(14):259272.
[4]Nishigohri M, Ishimaru K, Takahashi M, et al. Anomalous hotcarrier induced degradation in very narrow channel nMOSFET’s with STI Structure[C]∥Proc of International Electron Devices Meeting,1996:881884.
[5]Hu C. Lucky electron model of channel hot electron emission[C]∥Proc of International Electron Devices Meeting,1979:2225.
[6]Takeda E, Shimizu A, Hagiwara T. Role of hothole injection in hotcarrier effects and the small degraded channel region in MOSFETs[J]. IEEE Electron Device Letters, 1983, 4(9):329331.
[7]Heremans P, Bellens R, Groeseneken G, et al. Consistent model for the hot carrier degradation in nchannel and pchannel MOSFETs[J]. IEEE Transactions on Electron Devices, 1988, 35(12):21942209.
[8]Saha D, Varghese D, Mahapatra S. Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress[J]. IEEE Electron Device Letters, 2006,27(7):585587.
[9]Sun B,Shi G A,Nageswara S V S,et al.Vibrational lifetimes and frequencygap law of hydrogen bending modes in semiconductors[J]. Physical Review Letters, 2006, 96(3):035501.
[10]Varghese D, Mahapatra S, Alam A. Hole energy dependent interface trap generation in MOSFET Si/SiO2 interface[J]. IEEE Electron Device Letters, 2005, 26(8):572.
[11]Mahapatra S, Saha D, Varghese D, et al. On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN and HCI stress[J]. IEEE Transactions on Electron Devices, 2006, 53(7):15831591.
[12]Lee YH, Wu K, Linton T, et al. Channelwidth dependent hotcarrier degradation of thin gate pMOSFETs[C]∥Proc of IEEE 38th Annual International Reliability Physics Symposium,2000:77. |