忆阻器阻变机制及其材料研究进展

摘要/Abstract

摘要： 忆阻器可以将信息存储和逻辑运算整合到一个电子器件上，这将打破传统的冯·诺依曼计算机架构，其应用前景不可估量。首先简述了忆阻器的发展历程及其基本概念；其次综述了忆阻器的阻变机制及其材料的选择，将目前已知的阻变机制主要概括为3类，即阴离子阻变机制、阳离子阻变机制和纯电子机制，同时详细叙述了不同类型材料在忆阻器应用中的特点；然后论述了忆阻器在布尔逻辑计算以及神经形态系统方面的应用；最后展望了忆阻器未来的发展方向并总结了其在实际研究中仍未很好解决的难题。

关键词: 忆阻器, 存储, 阻变机制, 忆阻材料

Abstract: Memristor can integrate information storage and logic operation into one electronic device, which will break the traditional von Neumann computer architecture, and its application prospect is immeasurable. Firstly, the development course and basic concept of memristor are introduced. Secondly, the resistive switching mechanism of memristor and the choice of its material are summarized. The known resistive switching mechanism of memristor can be mainly divided into three categories: anion-dominant resistive switching mechanism, cation-dominant resistive switching mechanism, and pure electron-dominant resistive switching mechanism. At the same time, the characteristics of different types of materials in memristor application are described in detail. Then the application of memristor in Boolean calculation and neuromorphic system is discussed. Finally, the future development direction of memristor and the possible problems in its practical application are expected.

Key words: memristor, storage, resistance switching mechanism, memristive material

邓亚峰, 魏子健, 王栋. 忆阻器阻变机制及其材料研究进展[J]. 计算机工程与科学, 2022, 44(01): 36-47.

DENG Ya-feng, WEI Zi-jian, WANG Dong. Research progress in resistive switching mechanism and materials of memristor[J]. Computer Engineering & Science, 2022, 44(01): 36-47.

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