• 中国计算机学会会刊
  • 中国科技核心期刊
  • 中文核心期刊

J4 ›› 2012, Vol. 34 ›› Issue (1): 49-52.

• 论文 • 上一篇    下一篇

一种高速低功耗存储读写控制电路

孙永节,李鹏,陈海波   

  1. (国防科学技术大学计算机学院,湖南 长沙 410073)
  • 收稿日期:2011-05-25 修回日期:2011-09-29 出版日期:2012-01-25 发布日期:2012-01-25
  • 基金资助:

    教育部长江学者和创新团队发展计划(IRT0614)

A HighSpeed LowPower Memory ReadandWrite Control Circuit

SUN Yongjie,LI Peng,CHEN Haibo   

  1. (School of Computer Science,National University of Defense Technology,Changsha 410073,China)
  • Received:2011-05-25 Revised:2011-09-29 Online:2012-01-25 Published:2012-01-25

摘要:

本文提出了一种高速低功耗存储读写控制电路。该电路采用锁存器型敏感放大器,并将敏感放大器输入与存储器位线通过隔离电路互联,通过控制隔离电路和敏感放大器开启时机,可以有效实现存储器读出速度、读数据功耗和读出可靠性之间的折衷。文章给出的模拟分析结果对存储器设计者有很好的参考价值。

关键词: 存储器, 低功耗, 敏感放大器, 对偶位线, 隔离电路

Abstract:

A highspeed lowpower memory readandwrite control circuit is analyzed. In the circuit a latchbased sense amplifier is used and the input of the amplifier is connected to the bit lines of the memory through isolation transistors. Tradeoff can be made between the read delay, power dissipation and read reliability of a memory by controlling the timing of the isolation transistor and the sense amplifier. The simulation results in this paper will be useful for memory designer.

Key words: memory;low power;sense amplifier;differential bit line;isolation circuit