阱接触面积对PMOS单粒子瞬态脉冲宽度的影响

J4 ›› 2015, Vol. 37 ›› Issue (06): 1053-1057.

阱接触面积对PMOS单粒子瞬态脉冲宽度的影响

刘蓉容1，池雅庆1,2，何益百1，窦强1

（1.国防科学技术大学计算机学院，湖南长沙 410073;
2.电子元器件可靠性物理及其应用技术重点实验室，广东广州 510610）

收稿日期:2014-04-30 修回日期:2014-08-14 出版日期:2015-06-25 发布日期:2015-06-25
基金资助:
国家重点实验室开放基金（ZHD201202）

Impact of well contact area on
the PMOS SET pulse width

LIU Rongrong1,CHI Yaqing1,2,HE Yibai1,DOU Qiang1

（1.College of Computer,National University of Defense Technology,Changsha 410073;
2.National Key Laboratory of Science and Technology on Reliability Physics
and Application Technology of Electrical Component,Guangzhou 510610,China）

Received:2014-04-30 Revised:2014-08-14 Online:2015-06-25 Published:2015-06-25

摘要/Abstract

摘要：

使用TCAD模拟工具分析了纳米工艺下阱接触面积对PMOS SET脉冲宽度的影响。结果表明，纳米工艺下，当存在脉冲窄化效应时，增加阱接触面积会导致SET脉冲变宽，这与传统的通过增加阱接触面积可抑制SET脉冲的观点正好相反。同时，还分析了不同入射粒子LET值以及晶体管间距条件对该现象的作用趋势。

关键词: 阱接触面积, 单粒子瞬态, PMOS, 脉冲宽度

Abstract:

We analyze the impact of well contact area on the PMOS SET pulse width in nanotechnology using TCAD simulations. Simulation results show that in nanotechnology, increasing the well contact area can broaden the SET pulse width due to the pulse quenching effect, which contradicts the traditional view that increasing the well contact area can effectively mitigate the SET pulse. Meanwhile, the tendency of this phenomenon under different incident particle LET values and transistor gaps is also analyzed.

Key words: well contact area;single event transient;PMOS;pulse width

刘蓉容1，池雅庆1,2，何益百1，窦强1. 阱接触面积对PMOS单粒子瞬态脉冲宽度的影响[J]. J4, 2015, 37(06): 1053-1057.

LIU Rongrong1,CHI Yaqing1,2,HE Yibai1,DOU Qiang1. Impact of well contact area on
the PMOS SET pulse width [J]. J4, 2015, 37(06): 1053-1057.