电子束光刻中的相互邻近效应校正技术研究

J4 ›› 2011, Vol. 33 ›› Issue (7): 118-122.

电子束光刻中的相互邻近效应校正技术研究

赵真玉1,2，宋会英1

(1.中国石油大学(华东) 计算机与通信工程学院,山东东营 257061;
2.胜利油田高级人才培训中心党校，山东东营 257061)

收稿日期:2010-06-28 修回日期:2010-10-19 出版日期:2011-07-21 发布日期:2011-07-25
作者简介:赵真玉(1976),女,河北柏乡人，硕士，讲师，研究方向为电子束光刻及其模拟技术研究。宋会英(1968),女,山东利津人，博士，副教授，研究方向为电子束光刻、邻近效应校正及其仿真技术研究。
基金资助:
山东省自然科学基金资助项目(Y2007G21)

A Study of the Mutual Proximity Effect Correction in ElectronBeam Lithograph

ZHAO Zhenyu1,2,SONG Huiying1

(1.School of Computer and Communication Engineering,
China University of Petroleum(East China),Dongying 257061;
2.Party School of the Training Centre for Senior Talents of the Shengli Oilfield,Dongying 257061,China)

Received:2010-06-28 Revised:2010-10-19 Online:2011-07-21 Published:2011-07-25

摘要/Abstract

摘要：

本文研究了基于形状修正的电子束光刻分级邻近效应校正技术，在内部邻近效应校正的基础上，在计算图形之间产生的相互邻近效应过程中，采用了局部曝光窗口和全局曝光窗口机制。局部曝光窗口的区域小，对计算精度影响大，采用累积求和的方法进行精确计算；全局曝光窗口区域大，对计算精度影响小，采用大像点近似的方法进行计算，从而更快速地实现邻近效应校正。该技术的应用，满足了校正精度和运算速度两方面的要求。实验结果与模拟结果一致，表明通过采用局部曝光窗口和全局曝光窗口机制，能够快速地实现相互邻近效应校正，在校正精度相同的情况下，有效提高了运算速度。

关键词: 电子束光刻, 邻近效应校正, 有效曝光剂量, 局部曝光窗口, 全局曝光窗口

Abstract:

The proximity effect correction scheme of electronbeam lithograph based on the hierarchical shape modification is studied. According to the internal proximity effect correction, in order to calculate the mutual proximity effect, the local exposure window and the global exposure one are adopted. The smaller the area of the local exposure window is, the greater the impact on the accuracy of result, so the accumulated sum method is used to accurately calculate them. The larger the area of global exposure window is, the less the impact on the accuracy of result, so a large pixel approximation method can be used to calculate, thus proximity effect correction is realized rapidly. It also meets the precision and calculation speed requirements in the electronbeam lithography. The good agreement between the simulation and the lithography experimental results verify the effectiveness of the scheme. With the same precision, the speed of this correction scheme is improved.

Key words: electronbeam lithograph;proximity effect correction;effective exposure dosage;local exposure window;global exposure window

赵真玉1,2，宋会英1. 电子束光刻中的相互邻近效应校正技术研究[J]. J4, 2011, 33(7): 118-122.

ZHAO Zhenyu1,2,SONG Huiying1. A Study of the Mutual Proximity Effect Correction in ElectronBeam Lithograph[J]. J4, 2011, 33(7): 118-122.