Abstract:

In 3D SRAM based on 3DIC technology,the manufacturing process of TSV  is not mature yet,thus making TSVs be prone to open defects.And the existing test methods of TSV require a specific circuit, which  increases the area overhead. Derived from 2D Memory BIST,the faulty behaviors (full open defects) of TSV in 3D SRAM are modeled.Based on coupling effects between TSVs we study the behaviors of SRAM cell through simulations, analyze and verify the influence of open defects on the existing values of SRAM cells in read and write operations.The physical faults caused by TSV open defects are mapped into SRAM functional faults.It is an effective method for testing and solving the open defects of TSVs without introducing any additional testing circuit  in this way.

Key words: 3D-IC;TSV;open defects;test;model