Abstract:

We analyze the impact of well contact area on the PMOS SET pulse width in nanotechnology using TCAD simulations. Simulation results show that in nanotechnology, increasing the well contact area can broaden the SET pulse width due to the pulse quenching effect, which contradicts the traditional view that increasing the well contact area can effectively mitigate the SET pulse. Meanwhile, the tendency of this phenomenon under different incident particle LET values and transistor gaps is also analyzed.

Key words: well contact area;single event transient;PMOS;pulse width