Computer Engineering & Science >
Research on SingleEvent Transients in VoltageControlled Oscillators of PhaseLocked Loops
Received date: 2009-01-11
Revised date: 2009-04-10
Online published: 2011-02-25
Based on process calibration, single event transient in VoltageControlled Oscillators of high frequency PhaseLocked Loops in a 0.18μm bulk process is studied by the TCAD Mixedmode simulation. The impact of voltage, LET and temperature on SET are studied. Our simulation results demonstrate that the max phase difference caused by the particles on VCO is weak when NMOS works in the cutoff region. The pulse error number caused by the particles on VCO increases linearly as LET increases, and when the device temperature increases, the max phase difference on VCO also generally increases.
QIN Junrui,CHEN Jihua,ZHAO Zhenyu,LIANG Bin,LIU Zheng . Research on SingleEvent Transients in VoltageControlled Oscillators of PhaseLocked Loops[J]. Computer Engineering & Science, 2011 , 33(2) : 75 -79 . DOI: 10.3969/j.issn.1007130X.2011.
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