Abstract:

The proximity effect correction scheme of electronbeam lithograph based on the hierarchical shape modification is studied. According to the internal proximity effect correction, in order to calculate the mutual proximity effect, the local exposure window and the global exposure one are  adopted. The smaller the area of the local exposure window is, the greater the impact on the accuracy of result, so the accumulated sum method is used to accurately calculate them. The larger the area of global exposure window is, the less the impact on the accuracy of result, so a large pixel approximation method can be used to calculate, thus proximity effect correction is realized rapidly. It also meets the precision and calculation speed requirements in the electronbeam lithography. The good agreement between the simulation and the lithography experimental results verify the effectiveness of the scheme. With the same precision, the speed of this correction scheme is improved.

Key words: electronbeam lithograph;proximity effect correction;effective exposure dosage;local exposure window;global exposure window