Abstract:

A novel sense amplifier is proposed to be suitable for the Multiple Time Programmable Nonvolatile Memory (MTPNVM) of passive RadioFrequency Identification (RFID).The circuit has superior performance such as lowpower, high speed,reliability and highly sensitive without extra area overhead. The simulation based on GSMC 0.13μmCMOS process shows that the new sense amplifier has high read speed and can work at low voltages (0.8V).When the voltage is 1.2V and the temperature is 27℃,the read delay is 10.5ns,the power consumption is 6.1μW@25MHz and the current difference it can identify accurately is about 33nA.

Key words: sense amplifier；radio-frequency identification(RFID)；nonvolatile memory (NVM)；multiple time programmable(MTP)；low power