Abstract:

3D Monte Carlo simulation for semiconductor devices consumes long time. Especially when grids are growing and particles are increasing, the computing scale becomes very large. By analyzing the hotspots and the second level parallelism, the parallel scheme of the Effective Potential Method on Many Integrated Core is presented; Parallel schemes of particle free fighting, simulation information statistics and surface roughness scattering computation are researched. A 3-level parallel 3D Monte Carlo simulator for semiconductor devices is implemented and validated. Results show that the 3-level parallel program can get a better performance than the original single level parallel version. When the simulation accuracy is improved, the 3-level parallel program can get a greater speed-up ratio.

Key words: Monte Carlo；device simulating for semiconductor；many integrated core；effective potential method；particle free flight