• 中国计算机学会会刊
  • 中国科技核心期刊
  • 中文核心期刊

Computer Engineering & Science ›› 2022, Vol. 44 ›› Issue (01): 36-47.

Previous Articles     Next Articles

Research progress in resistive switching mechanism and materials of memristor

DENG Ya-feng,WEI Zi-jian,WANG Dong   

  1. (School of Mechanical and Electrical Engineering,Henan Agricultural University,Zhengzhou 450002,China)
  • Received:2020-07-05 Revised:2021-02-08 Accepted:2022-01-25 Online:2022-01-25 Published:2022-01-13

Abstract: Memristor can integrate information storage and logic operation into one electronic device, which will break the traditional von Neumann computer architecture, and its application prospect is immeasurable. Firstly, the development course and basic concept of memristor are introduced. Secondly, the resistive  switching mechanism of memristor and the choice of its material are summarized. The known resistive  switching mechanism of memristor can be mainly divided into three categories: anion-dominant resistive switching mechanism, cation-dominant resistive switching mechanism, and pure electron-dominant resistive switching mechanism. At the same time, the characteristics of different types of materials in memristor application are described in detail. Then the application of memristor in Boolean calculation and neuromorphic system is discussed. Finally, the future development direction of memristor and the possible problems in its practical application are expected.


Key words: memristor, storage, resistance switching mechanism, memristive material